Publikationen (Weber, Krieger, Malzer)
Publikationen der AG Weber, Krieger, Malzer
NOMAD CAMELS: Configurable Application for Measurements, Experiments and Laboratory Systems
In: Journal of Open Source Software (2024)
ISSN: 2475-9066
DOI: 10.21105/joss.06371
URL: https://joss.theoj.org/papers/10.21105/joss.06371
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Hexagonal Hybrid Bismuthene by Molecular Interface Engineering
In: Journal of the American Chemical Society 145 (2023), S. 12487–12498
ISSN: 0002-7863
DOI: 10.1021/jacs.2c13036
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Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers
In: Scientific Reports 13 (2023), Art.Nr.: 19086
ISSN: 2045-2322
DOI: 10.1038/s41598-023-46110-2
URL: https://www.nature.com/articles/s41598-023-46110-2
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Structural investigation of triangular defects in 4H-SiC epitaxial layers as nucleation source for bar shaped stacking faults (BSSFs)
In: Journal of Physics D: Applied Physics 56 (2023), Art.Nr.: 315101
ISSN: 0022-3727
DOI: 10.1088/1361-6463/acd127
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Structural investigation of triangular defects in 4H-SiC epitaxial layers as nucleation source for bar shaped stacking faults (BSSFs)
In: Journal of Physics D-Applied Physics 56 (2023), S. 315101
ISSN: 0022-3727
DOI: 10.1088/1361-6463/acd127
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Evaluation of 4H-SiC MOSFET transfer characteristics using machine-learning techniques
In: Electronics Letters (2023), Art.Nr.: e12752
ISSN: 0013-5194
DOI: 10.1049/ell2.12752
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Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiC
In: Defect and Diffusion Forum 426 (2023), S. 17-21
ISSN: 1012-0386
DOI: 10.4028/p-02xh85
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FAIRmat Guide to Writing Data Management Plans A Practical Guide for the Condensed-Matter Physics and Materials-Science Communities
1st Conference on Research Data Infrastructure (CoRDI) (Karlsruhe, Germany, 11. September 2023 - 15. September 2023)
DOI: 10.52825/cordi.v1i.378
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FAIR Research Data With NOMAD FAIRmat's Distributed, Schema-based Research-data Infrastructure to Harmonize RDM in Materials Science
1st Conference on Research Data Infrastructure (CoRDI) (Karlsruhe, Germany, 11. September 2023 - 15. September 2023)
DOI: 10.52825/cordi.v1i.376
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The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center
In: Defect and Diffusion Forum 426 (2023), S. 43-48
ISSN: 1012-0386
DOI: 10.4028/p-90qste
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Research Data Management for Experiments in Solid-State Physics: Concepts
1st Conference on Research Data Infrastructure (Karlsruhe, 11. September 2023 - 15. September 2023)
DOI: 10.52825/CoRDI.v1i.283
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Hierarchical Assembly and Sensing Activity of Patterned Graphene-Hamilton Receptor Nanostructures
In: Advanced Materials Interfaces (2022), Art.Nr.: 2200425
ISSN: 2196-7350
DOI: 10.1002/admi.202200425
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Measurement of the PtH defect depth profiles in fully processed silicon high-voltage diodes by improved current transient spectroscopy
34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 (Vancouver, BC, 22. Mai 2022 - 25. Mai 2022)
In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs 2022
DOI: 10.1109/ISPSD49238.2022.9813648
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Light-field control of real and virtual charge carriers
In: Nature 605 (2022), S. 251–255
ISSN: 0028-0836
DOI: 10.1038/s41586-022-04565-9
URL: https://www.nature.com/articles/s41586-022-04565-9
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Laser-Triggered Bottom-Up Transcription of Chemical Information: Toward Patterned Graphene/MoS2 Heterostructures
In: Journal of the American Chemical Society 144 (2022), S. 9645-9650
ISSN: 1520-5126
DOI: 10.1021/jacs.2c00642
URL: https://pubs.acs.org/doi/pdf/10.1021/jacs.2c00642
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Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices
In: Materials Science Forum 1062 (2022), S. 49-53
ISSN: 0255-5476
DOI: 10.4028/p-f26rb5
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Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices
In: Materials Research Express 9 (2022), Art.Nr.: 125901
ISSN: 2053-1591
DOI: 10.1088/2053-1591/acaa1f
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A point-like thermal light source as a probe for sensing light-matter interaction
In: Scientific Reports 12 (2022), Art.Nr.: 4881
ISSN: 2045-2322
DOI: 10.1038/s41598-022-07668-5
URL: https://www.nature.com/articles/s41598-022-07668-5
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Früh zur Datenkompetenz
In: Physik Journal 21 (2022), S. 42
ISSN: 1617-9439
Open Access: https://www.pro-physik.de/restricted-files/158142
URL: https://www.pro-physik.de/restricted-files/158142
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Light-field–driven electronics in the mid-infrared regime: Schottky rectification
In: Science Advances 8 (2022), Art.Nr.: eabj5014
ISSN: 2375-2548
DOI: 10.1126/sciadv.abj5014
URL: https://www.science.org/doi/10.1126/sciadv.abj5014
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Molecular Stacking on Graphene
In: Angewandte Chemie International Edition (2022), Art.Nr.: e202201169
ISSN: 1433-7851
DOI: 10.1002/anie.202201169
URL: https://onlinelibrary.wiley.com/doi/epdf/10.1002/anie.202201169
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Light field-driven electron dynamics in 2D-materials
2021 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2021 (Munich, DEU, 21. Juni 2021 - 25. Juni 2021)
In: 2021 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2021 2021
DOI: 10.1109/CLEO/Europe-EQEC52157.2021.9542335
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Covalent Patterning of 2D MoS2
In: Chemistry - A European Journal (2021)
ISSN: 0947-6539
DOI: 10.1002/chem.202102021
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Electronic Coherence and Coherent Dephasing in the Optical Control of Electrons in Graphene
In: Nano Letters 21 (2021), S. 9403–9409
ISSN: 1530-6984
DOI: 10.1021/acs.nanolett.1c02538
URL: https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.1c02538
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Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing
In: Journal of Physics D-Applied Physics 55 (2021), Art.Nr.: 105303
ISSN: 0022-3727
DOI: 10.1088/1361-6463/ac3a49
URL: http://iopscience.iop.org/article/10.1088/1361-6463/ac3a49
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Epitaxial Graphene on silicon carbide as a tailorable metal-semiconductor interface
In: Peter Wellmann, Noboru Ohtani, Roland Rupp (Hrsg.): Wide Bandgap Semiconductors for Power Electronics, Weinheim: Wiley VCH, 2021, S. 249 - 270
ISBN: 978-3-527-34671-4
DOI: 10.1002/9783527824724.ch10
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NOMAD CAMELS - Configurable Application for Measurements, Experiments and Laboratory Systems
(2021), Art.Nr.: /FAU-LAP/NOMAD-CAMELS
URL: https://github.com/FAU-LAP/NOMAD-CAMELS
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(anderer)
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Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
In: Applied Physics Letters 118 (2021), S. 144003
ISSN: 0003-6951
DOI: 10.1063/5.0046563
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Thermoelectricity of near-resonant tunnel junctions and their relation to Carnot efficiency
In: Scientific Reports 11 (2021), Art.Nr.: 2031
ISSN: 2045-2322
DOI: 10.1038/s41598-021-81466-3
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The Squeezable Nanojunction as a tuneable light-matter interface for studying photoluminescence of 2D materials
In: 2D Materials 8 (2021), Art.Nr.: 045034
ISSN: 2053-1583
DOI: 10.1088/2053-1583/ac2877
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Removing the orientational degeneracy of the TS defect in 4H-SiC by electric fields and strain
In: New Journal of Physics 23 (2021), Art.Nr.: 073002
ISSN: 1367-2630
DOI: 10.1088/1367-2630/abfb3e
URL: https://iopscience.iop.org/article/10.1088/1367-2630/abfb3e
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Molecular embroidering of graphene
In: Nature Communications 12 (2021), Art.Nr.: 552
ISSN: 2041-1723
DOI: 10.1038/s41467-020-20651-w
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Covalently Doped Graphene Superlattices: Spatially Resolved Supratopic- and Janus-Binding
In: Journal of the American Chemical Society 142 (2020), S. 16016-16022
ISSN: 1520-5126
DOI: 10.1021/jacs.0c07173
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Length-dependence of light-induced currents in graphene
In: Journal of Physics B-Atomic Molecular and Optical Physics (2020)
ISSN: 0953-4075
DOI: 10.1088/1361-6455/ab9075
URL: https://iopscience.iop.org/article/10.1088/1361-6455/ab9075
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Attosecond-fast internal photoemission
In: Nature Photonics 14 (2020), S. 219–222
ISSN: 1749-4885
DOI: 10.1038/s41566-019-0580-6
URL: https://arxiv.org/abs/2001.02989
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Noncovalent Functionalization and Passivation of Black Phosphorus with Optimized Perylene Diimides for Hybrid Field Effect Transistors
In: Advanced Materials Interfaces (2020)
ISSN: 2196-7350
DOI: 10.1002/admi.202001290
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Thermal origin of light emission in nonresonant and resonant nanojunctions
In: Physical Review Research 2 (2020), Art.Nr.: 042019 (R)
ISSN: 2643-1564
DOI: 10.1103/PhysRevResearch.2.042019
URL: https://link.aps.org/doi/10.1103/PhysRevResearch.2.042019
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Stark Tuning of the Silicon Vacancy in Silicon Carbide
In: Nano Letters 20 (2020), S. 658-663
ISSN: 1530-6984
DOI: 10.1021/acs.nanolett.9b04419
URL: https://pubs.acs.org/doi/10.1021/acs.nanolett.9b04419
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Highly Efficient and Reversible Covalent Patterning of Graphene: 2D-Management of Chemical Information
In: Angewandte Chemie International Edition (2020)
ISSN: 1433-7851
DOI: 10.1002/anie.201914088
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Detection and Cryogenic Characterization of Defects at the SiO2/4H-SiC Interface in Trench MOSFET
In: IEEE Transactions on Electron Devices 66 (2019), S. 1213-1217
ISSN: 0018-9383
DOI: 10.1109/TED.2019.2891820
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Präziser Einblick ins Innerste von Siliziumkarbid-MOSFETs
In: Elektronikpraxis - Profiline Sonderheft Leistungselektronik und Stromversorgungen I (2019), S. 16-18
ISSN: 0341-5589
Open Access: http://www.elektronikpraxis.vogel.de/praeziser-einblick-ins-innerste-von-siliziumkarbid-mosfets-a-804294/
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An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
In: Communications Physics 2 (2019), S. 5
ISSN: 2399-3650
DOI: 10.1038/s42005-018-0102-8
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Interaction of carrier envelope phase-stable laser pulses with graphene:the transition from the weak-field to the strong-field regime
In: New Journal of Physics (2019), Art.Nr.: 045003
ISSN: 1367-2630
DOI: 10.1088/1367-2630/ab13ce
URL: https://arxiv.org/abs/1903.07558
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Lightwave-controlled electron dynamics in graphene
XXI International Conference on Ultrafast Phenomena 2018 (UP 2018)
In: EPJ Web Conf. (Hrsg.): 205 2019
DOI: 10.1051/epjconf/201920505002
URL: https://www.epj-conferences.org/articles/epjconf/abs/2019/10/epjconf_up2019_05002/epjconf_up2019_05002.html
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Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer
12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
DOI: 10.4028/www.scientific.net/MSF.963.114
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Fractional Quantum Conductance Plateaus in Mosaic-Like Conductors and Their Similarities to the Fractional Quantum Hall Effect
In: Annalen Der Physik 531 (2019), Art.Nr.: 1800188
ISSN: 0003-3804
DOI: 10.1002/andp.201800188
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An ultra-stable setup for measuring electrical and thermoelectrical properties of nanojunctions
In: Applied Physics Letters 115 (2019), Art.Nr.: 083108
ISSN: 0003-6951
DOI: 10.1063/1.5116673
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On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs
In: Applied Physics Letters 115 (2019), S. 152102
ISSN: 0003-6951
DOI: 10.1063/1.5117829
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An efficient Terahertz rectifier on the graphene/SiC materials platform
In: Scientific Reports 9 (2019), Art.Nr.: 11205
ISSN: 2045-2322
DOI: 10.1038/s41598-019-47606-6
URL: https://www.nature.com/articles/s41598-019-47606-6
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Wie Molekülschwingungen Wärme leiten
In: Physik Journal 18 (2019), S. 20-21
ISSN: 1617-9439
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Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC
In: AIP Advances 9 (2019), S. 055308
ISSN: 2158-3226
DOI: 10.1063/1.5096440
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Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440)
In: AIP Advances 9 (2019), Art.Nr.: 079901
ISSN: 2158-3226
DOI: 10.1063/1.5118666
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On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements
12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
DOI: 10.4028/www.scientific.net/MSF.963.433
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Coherent Electron Trajectory Control in Graphene
In: Physical Review Letters 121 (2018), Art.Nr.: 207401
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.121.207401
URL: https://arxiv.org/abs/1811.07047
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Landau-Zener-Stückelberg interferometer on attosecond timescales in graphene
Ultrafast Phenomena and Nanophotonics XXII 2018 (San Francisco, CA, USA, 29. Januar 2018 - 31. Januar 2018)
In: Abdulhakem Y. Elezzabi, Markus Betz (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2018
DOI: 10.1117/12.2289540
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Structural fluctuations cause spin-split states in tetragonal (CH₃NH₃)PbI₃ as evidenced by the circular photogalvanic effect
In: Proceedings of the National Academy of Sciences of the United States of America 115 (2018), S. 9509-9514
ISSN: 0027-8424
DOI: 10.1073/pnas.1805422115
URL: https://www.pnas.org/doi/epdf/10.1073/pnas.1805422115
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Terahertz generation with ballistic photodiodes under pulsed operation
In: Semiconductor Science and Technology 33 (2018), Art.Nr.: 114015
ISSN: 0268-1242
DOI: 10.1088/1361-6641/aae5e4
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Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs
In: Materials Science Forum 924 (2018), S. 277-280
ISSN: 0255-5476
DOI: 10.4028/MSF.924.277
URL: https://www.scientific.net/MSF.924.277
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Determination of performance-relevant trapped charge in 4H silicon carbide MOSFETs
International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 (Columbia, WA, USA, 17. September 2017 - 22. September 2017)
In: Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley, Aivars Lelis (Hrsg.): Materials Science Forum 2018
DOI: 10.4028/www.scientific.net/MSF.924.277
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Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing
In: Applied Physics Letters 113 (2018), S. 122102
ISSN: 0003-6951
DOI: 10.1063/1.5045859
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Extreme Events through Prevailing Backscattering and Their Suppression by a Focusing Nonlinearity
In: Physical Review X 8 (2018), Art.Nr.: 011017
ISSN: 2160-3308
DOI: 10.1103/PhysRevX.8.011017
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Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
In: Materials Science Forum 924 (2018), S. 184-187
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.924.184
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Electron dynamics in graphene reaching the light-field-driven regime
The European Conference on Lasers and Electro-Optics, CLEO_Europe 2017 (Munich, DEU, 25. Juni 2017 - 29. Juni 2017)
In: Optics InfoBase Conference Papers 2017
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Light-field-driven currents in graphene
In: Nature 550 (2017), S. 224–228
ISSN: 0028-0836
DOI: 10.1038/nature23900
URL: https://arxiv.org/abs/1607.04198
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Origin of nonsaturating linear magnetoresistivity
In: Physical Review B 95 (2017), S. 024204
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.95.024204
URL: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.95.024204
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Charge-carrier transport in large-area epitaxial graphene
In: Annalen Der Physik 2017 (2017), Art.Nr.: 1700048
ISSN: 0003-3804
DOI: 10.1002/andp.201700048
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Charge Transport in C60-based Single-Molecule Junctions with Graphene Electrodes
In: Nanoscale 9 (2017), S. 7217-7226
ISSN: 2040-3364
DOI: 10.1039/C7NR00170C
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Anomalous Dirac point transport due to extended defects in bilayer graphene
In: Nature Communications 8 (2017), S. 342
ISSN: 2041-1723
DOI: 10.1038/s41467-017-00397-8
URL: https://www.nature.com/articles/s41467-017-00397-8
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On deep level transient spectroscopy of extended defects in n-type 4H-SiC
11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 (Halkidiki, GRC, 25. September 2016 - 29. September 2016)
In: Konstantinos Zekentes, Konstantinos Zekentes, Konstantin V. Vasilevskiy, Nikolaos Frangis (Hrsg.): Materials Science Forum 2017
DOI: 10.4028/www.scientific.net/MSF.897.201
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An electrical analogy to Mie scattering
In: Nature Communications 7 (2016), Art.Nr.: 12894
ISSN: 2041-1723
DOI: 10.1038/ncomms12894
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Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy
In: Materials Science Forum, 2016
DOI: 10.4028/www.scientific.net/MSF.897.111
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Light-field driven currents in graphene
In: arXiv 12 (2016)
ISSN: 2331-8442
URL: http://arxiv.org/abs/1607.04198
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Doping of 4H-SiC with group IV elements
In: Materials Science Forum 858 (2016), S. 301
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.858.301
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On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs
In: Materials Science Forum 858 (2016)
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.858.473
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Maximization of the optical intra-cavity power of whispering-gallery mode resonators via coupling prism
In: Optics Express 24 (2016), S. 26503-26514
ISSN: 1094-4087
DOI: 10.1364/OE.24.026503
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Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition
In: Journal of Applied Physics 120 (2016)
ISSN: 0021-8979
DOI: 10.1063/1.4967301
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Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces
In: Materials Science Forum 858 (2016), S. 697-700
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.858.697
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Measurements of the Electric Field of Zero-Point Optical Phonons in GaAs Quantum Wells Support the Urbach Rule for Zero-Temperature Lifetime Broadening
In: Physical Review Letters 114 (2015)
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.114.047402
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Electrical properties of the hydrogen intercalated epitaxial graphene/SiC interface investigated by nanoscale current mapping
In: Materials Science Forum 821-823 (2015), S. 929-932
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.821-823.929
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Graphene Ohmic Contacts to n-type Silicon Carbide (0001)
In: Materials Science Forum 821-823 (2015), S. 933-936
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.821-823.933
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Low-Energy Electron Potentiometry: Contactless Imaging of Charge Transport on the Nanoscale
In: Scientific Reports 5 (2015)
ISSN: 2045-2322
DOI: 10.1038/srep13604
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Linear magnetoresistance in mosaic-like bilayer graphene
In: Nature Physics 11 (2015), S. 650-+
ISSN: 1745-2473
DOI: 10.1038/NPHYS3368
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In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices
In: Applied Physics Letters 106 (2015), Art.Nr.: 233109
ISSN: 0003-6951
DOI: 10.1063/1.4922527
URL: http://scitation.aip.org/content/aip/journal/apl/106/23/10.1063/1.4922527
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Dielectric Rod Waveguide Antenna as THz Emitter for Photomixing Devices
In: IEEE Transactions on Antennas and Propagation 63 (2015), S. 882-890
ISSN: 0018-926X
DOI: 10.1109/TAP.2014.2387419
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Reduction of implantation-induced point defects by germanium ions in n-type 4H-SiC
In: Materials Science Forum 821-823 (2015), S. 347-350
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.821-823.347
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Gateless patterning of epitaxial graphene by local intercalation
In: Nanotechnology 26 (2015), S. 025302
ISSN: 1361-6528
DOI: 10.1088/0957-4484/26/2/025302
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Terahertz response of patterned epitaxial graphene
In: New Journal of Physics 17 (2015)
ISSN: 1367-2630
DOI: 10.1088/1367-2630/17/5/053045
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, , , , , , , :
Single-Molecule Junctions with Epitaxial Graphene Nanoelectrodes
In: Nano Letters 15 (2015), S. 3512-3518
ISSN: 1530-6984
DOI: 10.1021/acs.nanolett.5b00877
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, , , , , , :
Epitaxial graphene as an electrode material: a transistor testbed for organic and all-carbon semiconductors
In: RSC Advances 4 (2014), S. 34474
ISSN: 2046-2069
DOI: 10.1039/c4ra06131d
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, , , :
Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures
In: Materials Science Forum 778-780 (2014), S. 265-268
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.778-780.265
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, , , , , , , , :
Dislocations in bilayer graphene
In: Nature 505 (2014), S. 533-537
ISSN: 0028-0836
DOI: 10.1038/nature12780
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, , , , , , , , :
Electrical nanocharacterization of epitaxial graphene/silicon carbide Schottky contacts
In: Materials Science Forum 778-780 (2014), S. 1142-1145
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.778-780.1142
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, , , , , , :
Monolithic circuits with epitaxial graphene/silicon carbide transistors
In: Physica Status Solidi 8 (2014), S. 688-691
ISSN: 0031-8957
DOI: 10.1002/pssr.201409171
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, , :
Current noise in single-molecule junctions induced by electronic-vibrational coupling
In: Physical Review B 90 (2014)
ISSN: 0163-1829
DOI: 10.1103/PhysRevB.90.075409
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, , , :
Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition
In: Materials Science Forum 778-780 (2014), S. 261-264
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.778-780.261
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, , , , , , , , , , :
Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate
In: Journal of Physics D-Applied Physics 47 (2014), S. 305103 (5pp)
ISSN: 0022-3727
DOI: 10.1088/0022-3727/47/30/305103
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, , , :
The role of vibrations in single-molecule charge transport: A case study of oligoynes with pyridine anchor groups
In: physica status solidi (b) 250 (2013), S. 2452-2457
ISSN: 0370-1972
DOI: 10.1002/pssb.201350025
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, , , , , , , :
Arrayed free space continuous-wave terahertz photomixers
In: Optics Letters 38 (2013), S. 3673-3676
ISSN: 0146-9592
DOI: 10.1364/OL.38.003673
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, , , , , :
Detection of the Kondo effect in the resistivity of graphene: Artifacts and strategies
In: Physical Review B 88 (2013), S. 155412
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.88.155412
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, , :
Continuous-Wave Sub-THz Photonic Generation With Ultra-Narrow Linewidth, Ultra-High Resolution, Full Frequency Range Coverage and High Long-Term Frequency Stability
In: IEEE Transactions on Terahertz Science and Technology (2013)
ISSN: 2156-342X
DOI: 10.1109/TTHZ.2013.2260374
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, , , , , , , , :
From arrays of THz antennas to large-area emitters
In: IEEE Transactions on Terahertz Science and Technology 3 (2013), S. 532-544
ISSN: 2156-342X
DOI: 10.1109/TTHZ.2013.2266541
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, , , , , , , , , :
Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals
In: Optics Express 21 (2013), S. 17941-17950
ISSN: 1094-4087
DOI: 10.1364/OE.21.017941
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, , , , , :
Broadband THz detection and homodyne mixing using GaAs highelectron- Mobility transistor rectifiers
6th International Conference on Millimetre Wave and Terahertz Sensors and Technology (Dresden)
DOI: 10.1117/12.2029478
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, , , , , , , , , , :
Arrays and new antenna topologies for increasing THz power generation using photomixers
In: Journal of Infrared, Millimeter, and Terahertz Waves 34 (2013), S. 97-108
ISSN: 1866-6892
DOI: 10.1007/s10762-013-9954-x
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, , , , , , , , , , :
Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer
In: Physical Review B 87 (2013)
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.87.195425
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, , , , :
Emission of the THz waves from large area mesas of superconducting Bi 2Sr2CaCu2O8+δ by the injection of spin polarized current
In: Physica C-Superconductivity and Its Applications 491 (2013), S. 7-10
ISSN: 0921-4534
DOI: 10.1016/j.physc.2013.01.014
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, , , , , , , , :
Switching of a coupled spin pair in a single-molecule junction
In: Nature Nanotechnology 8 (2013), S. 575-579
ISSN: 1748-3387
DOI: 10.1038/nnano.2013.133
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, , , , , , , , , , :
Robust graphene membranes in a silicon carbide frame
In: ACS nano 7 (2013), S. 4441-4448
ISSN: 1936-0851
DOI: 10.1021/nn401037c
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, , , , , , , , , , , , , , , :
Silicon nitride as top gate dielectric for epitaxial graphene
In: Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein (Hrsg.): Silicon Carbide and Related Materials 2012, Trans Tech Publications, 2013, S. 149-152 (Materials Science Forum)
DOI: 10.4028/www.scientific.net/MSF.740-742.149
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, , , :
High power terahertz photomixer arrays
6th European Conference on Antennas and Propagation, EuCAP 2012 (Prague)
DOI: 10.1109/EuCAP.2012.6206195
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, , , , , , , , :
Experimental Evidence for Quantum Interference and Vibrationally Induced Decoherence in Single-Molecule Junctions
In: Physical Review Letters 109 (2012), S. 056801
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.109.056801
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, , , , , , , :
An electrostatic gate for mechanically controlled single-molecule junctions
In: New Journal of Physics 14 (2012)
ISSN: 1367-2630
DOI: 10.1088/1367-2630/14/12/123028
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, :
Ultra-narrow linewidth CW sub-THz generation using GS based OFCG and n-i-pn-i-p superlattice photomixers
In: Electronics Letters 48 (2012), S. 1425-1426
ISSN: 0013-5194
DOI: 10.1049/el.2012.3158
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, , , , , , , , :
Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics
In: Nature Communications 3 (2012), S. 957
ISSN: 2041-1723
DOI: 10.1038/ncomms1955
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, , , , , , , , :
Electron-Electron Interaction in the Magnetoresistance of Graphene
In: Physical Review Letters 108 (2012)
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.108.106601
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, , , , :
Origin of logarithmic resistance correction in graphene
In: Nature Physics 8 (2012), S. 352-352
ISSN: 1745-2473
DOI: 10.1038/nphys2297
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, :
A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel
In: Applied Physics Letters 100 (2012), S. 122102
ISSN: 0003-6951
DOI: 10.1063/1.3695157
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, , , , , , , :
1550 nm ErAs:In(Al)GaAs large area photoconductive emitters
In: Applied Physics Letters 101 (2012)
ISSN: 0003-6951
DOI: 10.1063/1.4750244
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, , , , , :
Interferometer measurements of terahertz waves from Bi 2Sr 2CaCu 2O 8+d mesas
In: Superconductor Science & Technology 25 (2012), Art.Nr.: 125004
ISSN: 0953-2048
DOI: 10.1088/0953-2048/25/12/125004
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, , , , , , , , , :
Implanted bottom gate for epitaxial graphene on silicon carbide
In: Journal of Physics D-Applied Physics 45 (2012), S. 154006
ISSN: 0022-3727
DOI: 10.1088/0022-3727/45/15/154006
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, , , , , , :
Gated Epitaxial Graphene Devices
In: Materials Science Forum 717-720 (2012), S. 675-678
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.717-720.675
URL: http://www.scientific.net/MSF.717-720.675
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, , , , , :
Z(1/2)- and EH6-Center in 4H-SiC: Not Identical Defects?
In: Materials Science Forum 717-720 (2012), S. 251-254
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.717-720.251
URL: http://www.scientific.net/MSF.717-720.251
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, , , , , :
Sub-THz and THz Photonic generation with continuous tunability using gain switching based optical frequency comb generators and n-i-p-n-i-p superlattice photomixers
2012 IEEE International Topical Meeting on Microwave Photonics, MWP 2012 (Noordwijk)
DOI: 10.1109/MWP.2012.6474118
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, , , , , , , , :
Current annealing and electrical breakdown of epitaxial graphene
In: Applied Physics Letters 98 (2011), S. 212109
ISSN: 0003-6951
DOI: 10.1063/1.3592841
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, , , , , :
Transport properties of high-quality epitaxial graphene on 6H-SiC(0001)
In: Solid State Communications 151 (2011), S. 1061-1064
ISSN: 0038-1098
DOI: 10.1016/j.ssc.2011.05.015
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, , , , , , :
Gain enhancement by dielectric horns in the Terahertz band
In: IEEE Transactions on Antennas and Propagation 59 (2011), S. 3164-3170
ISSN: 0018-926X
DOI: 10.1109/TAP.2011.2161563
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, , , , , , , :
Modulational instability and solitons in excitonic semiconductor waveguides
In: Physical Review B 83 (2011), Art.Nr.: 205207
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.83.205207
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, , :
Tunable, Continuos-Wave Photomixer Sources and Applications
In: Journal of Applied Physics 109 (2011), S. 061301
ISSN: 0021-8979
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, , , , :
Arrayed telecom-wavelength compatible THz n-i-pn-i-p superlattice photomixers for spectroscopy applications
In: Mauro F. Pereira, Oleksiy Shulika (Hrsg.): Terahertz and Midinfrared Radiation, Springer Verlag, 2011, S. 139-146 (NATO Science for Peace and Security Series B: Physics and Biophysics)
ISBN: 978-94-007-0768-9
DOI: 10.1007/978-94-007-0769-6-20
URL: http://link.springer.com/chapter/10.1007/978-94-007-0769-6_20
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, , , , , , :
Resonant Vibrations, Peak Broadening, and Noise in Single Molecule Contacts: The Nature of the First Conductance Peak
In: Physical Review Letters 106 (2011), S. 136807
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.106.136807
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, , , , , :
Efficient optical up-conversion by coherent sum-frequency generation for highly sensitive terahertz detection
2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 (Munich)
DOI: 10.1109/CLEOE.2011.5942526
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, , , , , , , :
The quasi-free-standing nature of graphene on H-saturated SiC(0001)
In: Applied Physics Letters 9 (2011), S. 12206
ISSN: 0003-6951
DOI: 10.1063/1.3643034
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, , , , , , , :
Bottom-gated epitaxial graphene
In: Nature Materials 10 (2011), S. 357-360
ISSN: 1476-1122
DOI: 10.1038/nmat2988
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, , , , , :
Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001)
In: Applied Physics Letters 97 (2010), Art.Nr.: 081902
ISSN: 0003-6951
DOI: 10.1063/1.3479501
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, , , , :
Fiber optic based system for polarization sensitive spectroscopy of semiconductor quantum structures
In: Review of Scientific Instruments 81 (2010), Art.Nr.: 083901
ISSN: 0034-6748
DOI: 10.1063/1.3462977
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, , , , , , , :
Molecular wires in single-molecule junctions: Charge transport and vibrational excitations
In: ChemPhysChem 11 (2010), S. 2256-2260
ISSN: 1439-4235
DOI: 10.1002/cphc.200900974
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, , , , , , :
Silicon Carbide and Related Materials 2009 - Parts 1 and 2
Stafa-Zuerich: 2010
(Materials Science Forum, Bd. 645-648)
ISBN: 0-87849-279-8
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, , , , , (Hrsg.):
Continuos Wave Terahertz Emitter Arrays for Spectroscopy and Imaging Applications
In: Proceedings of SPIE 7671 (2010), S. 7671D
ISSN: 0277-786X
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, , , , , , :
Continuous wave terahertz emitter arrays for spectroscopy and imaging applications
Terahertz Physics, Devices, and Systems IV: Advanced Applications in Industry and Defense (Orlando, FL)
DOI: 10.1117/12.850090
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, , , , , , :
Quantum oscillations and quantum Hall effect in epitaxial graphene
In: Physical Review B 81 (2010)
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.81.195434
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, , , , , , :
Efficient III-V tunneling diodes with ErAs recombination centers
In: Semiconductor Science and Technology 25 (2010), Art.Nr.: 115004
ISSN: 0268-1242
DOI: 10.1088/0268-1242/25/11/115004
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, , , , , :
Quasi-freestanding Graphene on SiC(0001)
In: Materials Science Forum 645-648 (2010), S. 629-632
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.645-648.629
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, , , , , , , , :
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
In: Nature Materials 8 (2009), S. 203-207
ISSN: 1476-1122
DOI: 10.1038/NMAT2382
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, , , , , , , , , , , , , , :
Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors
In: physica status solidi (b) 245 (2008), S. 1390-1395
ISSN: 0370-1972
DOI: 10.1002/pssb.200844062
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, , , , , , , , , :
Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy
In: Physical Review B 77 (2008), S. 155426
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.77.155426
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, , , , , , :
Charge Transport through Molecular Rods with Reduced pi-Conjugation
In: ChemPhysChem 9 (2008), S. 2252-2258
ISSN: 1439-4235
DOI: 10.1002/cphc.200800388
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, , , , , , :
Coupled whispering gallery mode resonators in the Terahertz frequency range
In: Optics Express 16 (2008), S. 7336-7343
ISSN: 1094-4087
DOI: 10.1364/OE.16.007336
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, , , , , , , :
Interference between two coherently driven monochromatic terahertz sources
In: Applied Physics Letters 92 (2008), Art.Nr.: 221107
ISSN: 0003-6951
DOI: 10.1063/1.2938874
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, , , , , , , :
Charge Transport Through a Cardan-Joint Molecule
In: Small 4 (2008), S. 2229-2235
ISSN: 1613-6829
DOI: 10.1002/smll.200800390
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, , , , , , , , :
Optical Landau state mapping with in-plane electric fields
In: Physica Status Solidi (C) Current Topics in Solid State Physics 4 (2007), S. 279-287
ISSN: 1862-6351
DOI: 10.1002/pssc.200673208
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, , , , :
Impurity Conduction in Silicon Carbide
In: Materials Science Forum 556-557 (2007), S. 364
ISSN: 0255-5476
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, , , , , :
Connection of anisotropic conductivity to tip-induced space-charge layers in scanning tunneling spectroscopy of p-doped GaAs
In: Physical Review B 76 (2007), Art.Nr.: 235318
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.76.235318
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, , , , :
Statistical approach to investigating transport through single molecules
In: Physical Review Letters 98 (2007)
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.98.176807
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, , :
Self-organized tungsten nanospikes grown on subwavelength ripples induced by femtosecond laser pulses
In: Optics Express 15 (2007), S. 15741-15746
ISSN: 1094-4087
DOI: 10.1364/OE.15.015741
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, , :
Efficient terahertz emission from ballistic transport enhanced n-i-p-n-i-p superlattice photomixers
In: Applied Physics Letters 90 (2007), Art.Nr.: 212115
ISSN: 0003-6951
DOI: 10.1063/1.2743400
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, , , , , , , , :
Atomic scale structure and optical emission of Alx Ga1-x As GaAs quantum wells
In: Physical Review B 75 (2007), Art.Nr.: 115317
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.75.115317
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, , , , , , , , , , :
Charge transport across single-molecule junctions: charge reconfiguration and structural dynamics
In: physica status solidi (b) 244 (2007), S. 4176-4180
ISSN: 0370-1972
DOI: 10.1002/pssb.200776207
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, :
Growth of cubic SiC single crystals by the physical vapor transport technique
In: Journal of Crystal Growth 308 (2007), S. 241-246
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2007.07.060
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, , , , , , , , :
Enhancement of optical absorption and photocurrent of 6H-SiC by laser surface nanostructuring
In: Applied Physics Letters 91 (2007), Art.Nr.: 121107
ISSN: 0003-6951
DOI: 10.1063/1.2786863
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, , , :
Formation of subwavelength periodic structures on tungsten induced by ultrashort laser pulses
In: Optics Letters 32 (2007), S. 1932-1934
ISSN: 0146-9592
DOI: 10.1364/OL.32.001932
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, , :
Compact, low-cost, and high-resolution interrogation unit for optical sensors
In: Applied Physics Letters 89 (2006), Art.Nr.: 201113
ISSN: 0003-6951
DOI: 10.1063/1.2390650
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, , , , :- Loth S., Wenderoth M., Winking L., Ulbrich R.G., Malzer S., Dohler G.H.:
Probing semiconductor gap states with resonant tunneling
In: Physical Review Letters 96 (2006)
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.96.066403
BibTeX: Download - Rurimo G.K., Schardt M., Quabis S., Malzer S., Dotzler Ch., Winkler A., Leuchs G., Dohler G.H., Driscoll D., Hanson M., Gossard A.C., Pereira S.F.:
Using a quantum well heterostructure to study the longitudinal and transverse electric field components of a strongly focused laser beam
In: Journal of Applied Physics 100 (2006), Art.Nr.: 023112
ISSN: 0021-8979
DOI: 10.1063/1.2214207
BibTeX: Download - Schardt M., Winkler A., Rurimo G., Hanson M., Driscoll D., Quabis S., Malzer S., Leuchs G., Dohler G.H., Gossard A.C.:
TE- and TM-polarization-resolved spectroscopy on quantum wells under normal incidence
In: Physica E-Low-Dimensional Systems & Nanostructures 32 (2006), S. 241-244
ISSN: 1386-9477
DOI: 10.1016/j.physe.2005.12.168
BibTeX: Download - Beck M., Metzner C., Malzer S., Dohler G.H.:
Spin lifetimes and strain-controlled spin precession of drifting electrons in GaAs
In: EPL - Europhysics Letters 75 (2006), S. 597-603
ISSN: 0295-5075
DOI: 10.1209/epl/i2006-10151-4
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Fast temporal fluctuations in single-molecule junctions
In: Faraday Discussions 131 (2006), S. 281-289
ISSN: 1359-6640
DOI: 10.1039/b506390f
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, , , , :
Electronic Raman Studies of Shallow Donors in Silicon Carbide
In: Materials Science Forum 527-529 (2006), S. 579
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.527-529.579
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, , , , , , , , , :
Deactivation of nitrogen donors in silicon carbide
In: Physical Review B B 74 (2006), S. 245212
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.74.245212
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, , , , , , , , :
Fabrication of genuine single-quantum-dot light-emitting diodes
In: Applied Physics Letters 88 (2006), Art.Nr.: 121115
ISSN: 0003-6951
DOI: 10.1063/1.2188057
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, , , , , , , , , , , , :
THz-photomixer based on quasi-ballistic transport
In: Semiconductor Science and Technology 20 (2005)
ISSN: 0268-1242
DOI: 10.1088/0268-1242/20/7/007
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, , , , , , , , , , , :
A single-molecular diode
In: Proceedings of the National Academy of Sciences of the United States of America 102 (2005), S. 8815-8820
ISSN: 0027-8424
DOI: 10.1073/pnas.0408888102
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, , , , , , , , :
A single-molecule diode
In: Proceedings of the National Academy of Sciences of the United States of America 102 (2005), S. 8815-8820
ISSN: 0027-8424
DOI: 10.1073/pnas.0408888102
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, , , , , , , , :- Malzer S., Steen C., Kiesel P., Dohler G.H.:
Determination of optical cross sections for electron and hole emission from deep defects in low-temperature-grown GaAs
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (Flagstaff, AZ)
DOI: 10.1063/1.1994037
BibTeX: Download - Kramer S., Neumann S., Prost W., Tegude F.J., Malzer S., Dohler G.H.:
Determination of piezo-electric fields in spontaneously ordered InGaAsP
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (Flagstaff, AZ)
DOI: 10.1063/1.1994022
BibTeX: Download - Kramer S., Neumann S., Prost W., Tegude F.J., Malzer S., Dohler G.H.:
Polarisation-sensitive switch: An integrated intensity-independent solution for 1.3 μm based on the polarisation anisotropy of ordered InGaAsP
In: physica status solidi (a) 202 (2005), S. 992-996
ISSN: 1862-6300
DOI: 10.1002/pssa.200460716
BibTeX: Download - Winking L., Wenderoth M., Reusch T.C.G., Ulbrich R.G., Wilbrandt P.-J., Kirchheim R., Malzer S., Dohler G.:
Structural properties and electronic states of carbon delta-layers in GaAs
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (Flagstaff, AZ)
DOI: 10.1063/1.1994038
BibTeX: Download - Renner F.H., Klar O., Malzer S., Driscoll D., Hanson M., Gossard A.C., Loata G., Loffler T., Roskos H., Dohler G.H.:
The nipnip-THz-emitter: Photomixing based on ballistic transport
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (Flagstaff, AZ)
DOI: 10.1063/1.1994552
BibTeX: Download - Eckardt M., Betz M., Schwanhausser A., Trumm S., Sotier F., Robledo L., Malzer S., Muller T., Unterrainer K., Leitenstorfer A., Dohler G.H.:
THz collective oscillations of ballistic electrons in wide potential wells: Bridging classical transport with quantum dynamics
In: EPL - Europhysics Letters 70 (2005), S. 534-540
ISSN: 0295-5075
DOI: 10.1209/epl/i2005-10014-6
BibTeX: Download - Renner F., Eckardt M., Schwanhausser A., Klar O., Malzer S., Dohler G.H., Loata G., Loffler T., Roskos H., Hanson M., Driscoll D., Gossard A.C.:
THz-emitter based on ballistic transport in nano-pin diodes
In: physica status solidi (a) 202 (2005), S. 965-969
ISSN: 1862-6300
DOI: 10.1002/pssa.200460706
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Implantation and Annealing of Aluminum in 4H Silicon Carbide
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237 (2005), S. 68-71
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2005.04.079
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, , , , , , :
Dimensionality effects on nonequilibrium electronic transport in Cu nanobridges
In: Physical Review B 70 (2004)
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.70.033407
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, , :
Evidence for crossed Andreev reflection in superconductor-ferromagnet hybrid structures
In: Physical Review Letters 93 (2004)
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.93.197003
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, , :- Semmelroth Kurt, Krieger Michael, Pensl Gerhard, Nagasawa H., Püsche R., Hundhausen Martin, Ley Lothar, Nerding M., Strunk H. P.:
Growth of 3C-SiC Bulk Material by the Modified Lely-Method
In: Materials Science Forum 457-460 (2004), S. 151
ISSN: 0255-5476
BibTeX: Download - Pusep Yu.A., Ribeiro M.B., Arakaki H., De Souza C.A., Zanello P.A., Malzer S., Dohler G.H.:
Regimes of quantum transport in superlattices in a weak magnetic field
In: Journal of Physics: Condensed Matter 16 (2004), S. 2447-2453
ISSN: 0953-8984
DOI: 10.1088/0953-8984/16/13/022
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Statistical analysis of single-molecule junctions
In: Angewandte Chemie International Edition 43 (2004), S. 2882-2884
ISSN: 1433-7851
DOI: 10.1002/anie.200301733
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Simultaneous deposition of individual single-walled carbon nanotubes onto microelectrodes via AC-dielectrophoresis
In: H. Kuzmany (Hrsg.): Electric Properties of Synthetic Nanostructures : XVII International Winterschool/Euroconference on Electronic Properties of Novel Materials (IWEPNM 2004),, AIP, 2004, S. 561-564
DOI: 10.1063/1.1812151
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Contacting single bundles of carbon nanotubes with alternating electric fields
In: Applied Physics A-Materials Science & Processing 76 (2003), S. 397-400
ISSN: 0947-8396
DOI: 10.1007/s00339-002-1592-4
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Simultaneous deposition of metallic bundles of single-walled carbon nanotubes using ac-dielectrophoresis
In: Nano Letters 3 (2003), S. 1019-1023
ISSN: 1530-6984
DOI: 10.1021/nl0342343
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Electric current through a molecular rod - Relevance of the position of the anchor groups
In: Angewandte Chemie International Edition 42 (2003), S. 5834-5838
ISSN: 1433-7851
DOI: 10.1002/anie.200352179
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Low-temperature conductance measurements on single molecules
In: Applied Physics Letters 82 (2003), S. 4137-4139
ISSN: 0003-6951
DOI: 10.1063/1.1574844
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Patterning and visualizing self-assembled monolayers with low-energy electrons
In: Nano Letters 2 (2002), S. 1161-1164
ISSN: 1530-6984
DOI: 10.1021/nl025679e
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Molecular electronics - Integration of single molecules in electronic circuits
In: Chimia 56 (2002), S. 494-499
ISSN: 0009-4293
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A trans-platinum(II) complex as a single-molecule insulator
In: Angewandte Chemie International Edition 41 (2002), S. 1183-+
ISSN: 1433-7851
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Driving Current through Single Organic Molecules
In: Physical Review Letters 88 (2002), S. 176804
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.88.176804
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Electronic transport through single conjugated molecules
In: Chemical Physics 281 (2002), S. 113-125
ISSN: 0301-0104
DOI: 10.1016/S0301-0104(02)00343-9
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