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Training NETwork on Functional Interfaces for SiC

 

Training NETwork on Functional Interfaces for SiC

(Drittmittelfinanzierte Gruppenförderung – Teilprojekt)

Titel des Gesamtprojektes: Training NETwork on Functional Interfaces for SiC
Projektleitung:
Projektbeteiligte:
Projektstart: 01/01/09
Projektende: 12/31/11
Akronym: NetFISiC
Mittelgeber: EU - 7. RP / People / Initial Training Networks (ITN)
URL:

Abstract

The main scientific objective of NetFISiC (ITN Marie Curie action) is to provide Silicon carbide material (of various polytypes) with improved and adequate functional interfaces for getting a step forward in electronic devices performance. Research efforts will be dedicated to solve the problems faced by important devices like MOSFET and Schottky diodes. Besides, some fundamental research will be performed both on the growth aspect and on new and innovating devices. Applications in high temperature, high power and harsh environment are targeted. Based on this research program, the ambitious target of NeTFISiC partners is to train the next generation of researchers on various semiconductor related fields (such as physics, material science and engineering), taking the emerging SiC technology as an appropriate tool for study. This shall contribute to long-term strengthening of the European position on a technologically important semiconductor. 13 early stage researchers (ESR) and 2 experienced researchers (ER) will be recruited and trained within this network, on multi-disciplinary subjects like material growth, characterization and devices fabrication, with a particular focus on SiC. For each of these young researchers, the individual training at the host institution will be enriched by specific shared training in other partner's institution and joint training activities (workshops, training schools, tutorial days) organized by the network. This shall give them the broad necessary background in order to understand the various aspect of semiconductor science.

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